White noise in MOS transistors and resistors

Shot noise behaviour of subthreshold MOS transistors

2014 It is shown that assuming weak inversion, low drain current asymptotic value of the gate equivalent noise resistor is given by n2/2 UT/ID, corresponding to shot noise. Measurements confirming this theory as well as flicker noise measurements on n and p channel transistors integrated with either bulk or SOS CMOS silicon gate technology are presented. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉC...

noise in linear macroscopic resistors

We report on a direct experimental evidence of shot noise in a linear macro-scopic resistor. The origin of the shot noise comes from the fluctuation of the total number of charge carriers inside the resistor associated with their diffu-sive motion under the condition that the dielectric relaxation time becomes longer than the dynamic transit time. Present results show that neither potential bar...

Floating-gate Mos Synapse Transistors

NSR Noise Suppressors - Wirewound Resistors

GENERATED NOISE IN IGNITION SYSTEMS High-frequency electromagnetic interference (EMI), commonly referred to as Radio Frequency Interference (RFI), generated by a gasoline engine ignition system, comes primarily from the high-voltage side of the circuit. Ignition systems produce sparks at the coil where the battery voltage is converted into high voltage pulses, at the distributor where the high ...

Simple, Continuous and Consistent Physics Based Model for Flicker Noise in Mos Transistors

Although there is still controversy about its origin, the designer requires accurate models to estimate 1/f noise of the MOS transistor in terms of its size, bias point and technology. Conventional models present limitations; they usually do not consistently represent the series-parallel association of transistors and they may not provide adequate results for all the operation regions, particul...